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| 1 TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES s s s s s s s s s s s s Latch-Up Protected ............. Will Withstand > 1.5A Reverse Output Current Logic Input Will Withstand Negative Swing Up to 5V ESD Protected ..................................................... 4kV Matched Rise and Fall Times ...................... 25nsec High Peak Output Current ......................... 6A Peak Wide Operating Range .......................... 4.5V to 18V High Capacitive Load Drive ..................... 10,000 pF Short Delay Time .................................. 55nsec Typ Logic High Input, Any Voltage ............. 2.4V to VDD Low Supply Current With Logic "1" Input ... 450A Low Output Impedance .................................... 2.5 Output Voltage Swing to Within 25mV of Ground or VDD GENERAL DESCRIPTION The TC4420/4429 are 6A (peak), single output MOSFET drivers. The TC4429 is an inverting driver (pin-compatible with the TC429), while the TC4420 is a non-inverting driver. These drivers are fabricated in CMOS for lower power, more efficient operation versus bipolar drivers. Both devices have TTL-compatible inputs, which can be driven as high as VDD + 0.3V or as low as - 5V without upset or damage to the device. This eliminates the need for external level shifting circuitry and its associated cost and size. The output swing is rail-to-rail ensuring better drive voltage margin, especially during power up/power down sequencing. Propagational delay time is only 55nsec (typ.) and the output rise and fall times are only 25nsec (typ.) into 2500pF across the usable power supply range. Unlike other drivers, the TC4420/4429 are virtually latch-up proof. They replace three or more discrete components saving PCB area, parts and improving overall system reliability. 2 3 4 5 6 7 APPLICATIONS s s s s Switch-Mode Power Supplies Motor Controls Pulse Transformer Driver Class D Switching Amplifiers ORDERING INFORMATION Part No. Logic Noninverting Noninverting Noninverting Noninverting Noninverting Noninverting Noninverting Inverting Inverting Inverting Inverting Inverting Inverting Inverting Package Temp. Range FUNCTIONAL BLOCK DIAGRAM VDD 500 A TC4429 300 mV OUTPUT TC4420CAT TC4420COA TC4420CPA TC4420EOA TC4420EPA TC4420IJA TC4420MJA TC4429CAT TC4429COA TC4429CPA TC4429EOA TC4429EPA TC4429IJA TC4429MJA 5-Pin TO-220 0C to +70C 8-Pin SOIC 0C to +70C 8-Pin PDIP 0C to +70C 8-Pin SOIC - 40C to +85C 8-Pin PDIP - 40C to +85C 8-Pin CerDIP -25C to +85C 8-Pin CerDIP - 55C to +125C 5-Pin TO-220 0C to +70C 8-Pin SOIC 0C to +70C 8-Pin PDIP 0C to +70C 8-Pin SOIC - 40C to +85C 8-Pin PDIP - 40C to +85C 8-Pin CerDIP - 25C to +85C 8-Pin CerDIP - 55C to +125C INPUT 4.7V GND EFFECTIVE INPUT C = 38 pF TC4420 PIN CONFIGURATIONS TO-220-5 VDD INPUT 1 2 3 4 8-Pin DIP 8 7 VDD OUTPUT OUTPUT GND VDD INPUT NC GND 1 2 3 4 8-Pin SOIC 8 7 VDD OUTPUT OUTPUT GND TC4420 TC4429 Tab is Connected to VDD INPUT GND VDD GND OUTPUT NC GND TC4420 TC4429 6 5 TC4420 TC4429 6 5 NOTE: Duplicate pins must both be connected for proper operation. TC4420/9-6 10/18/96 8 TELCOM SEMICONDUCTOR, INC. 4-225 6A HIGH-SPEED MOSFET DRIVERS TC4420 TC4429 ABSOLUTE MAXIMUM RATINGS* Supply Voltage ......................................................... +20V Input Voltage ............................................... - 5V to > VDD Input Current (VIN > VDD) .........................................50mA Power Dissipation, TA 70C PDIP ...............................................................730mW SOIC ...............................................................470mW CerDIP ............................................................800mW 5-Pin TO-220 ......................................................1.6W Package Power Dissipation (TA 70C) 5-Pin TO-220 (With Heat Sink) .........................1.60W Derating Factors (To Ambient) PDIP ............................................................. 8mW/C SOIC ............................................................. 4mW/C CerDIP ....................................................... 6.4mW/C 5-Pin TO-220 .............................................. 12mW/C Thermal Impedances (To Case) 5-Pin TO-220 RJ-C ........................................ 10C/W Storage Temperature Range ................ - 65C to +150C Operating Temperature (Chip) .............................. +150C Operating Temperature Range (Ambient) C Version ............................................... 0C to +70C I Version ........................................... - 25C to +85C E Version .......................................... - 40C to +85C M Version ....................................... - 55C to +125C Lead Temperature (Soldering, 10 sec) ................. +300C *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: TA = +25C with 4.5V VDD 18V, unless otherwise specified. Symbol Input VIH VIL VIN (Max) IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Voltage Range Input Current High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Latch-Up Protection Withstand Reverse Current Rise Time Fall Time Delay Time Delay Time Power Supply Current Operating Input Voltage 2.4 -- -5 - 10 VDD - 0.025 -- -- -- -- 1.5 1.8 1.3 -- -- -- -- 2.1 1.5 6 -- -- 0.8 VDD+0.3 10 -- 0.025 2.8 2.5 -- -- V V V A V V A A Parameter Test Conditions Min Typ Max Unit 0V VIN VDD See Figure 1 See Figure 1 IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V VDD = 18V (See Figure 5) Duty Cycle 2% t 300 s Figure 1, CL = 2500 pF Figure 1, CL = 2500 pF Figure 1 Figure 1 VIN = 3V VIN = 0V Output VOH VOL RO RO IPK IREV Switching Time (Note 1) tR tF tD1 tD2 -- -- -- -- -- -- 4.5 25 25 55 55 0.45 55 -- 35 35 75 75 1.5 150 18 nsec nsec nsec nsec mA A V Power Supply IS VDD 4-226 TELCOM SEMICONDUCTOR, INC. 6A HIGH-SPEED MOSFET DRIVERS TC4420 TC4429 ELECTRICAL CHARACTERISTICS: Symbol Input VIH VIL VIN (Max) IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Voltage Range Input Current High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Rise Time Fall Time Delay Time Delay Time Power Supply Current Operating Input Voltage 2.4 -- -5 - 10 VDD - 0.025 -- -- -- -- -- -- -- -- -- 4.5 -- -- -- -- -- -- 3 2.3 32 34 50 65 0.45 60 -- -- 0.8 VDD + 0.3 10 -- 0.025 5 5 60 60 100 100 3 400 18 V V V A V V nsec nsec nsec nsec mA A V 1 Measured over operating temperature range with 4.5V VDD 18V, unless otherwise specified. Test Conditions Min Typ Max Unit Parameter 2 3 4 5 0V VIN VDD See Figure 1 See Figure 1 IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V Figure 1, CL = 2500 pF Figure 1, CL = 2500 pF Figure 1 Figure 1 VIN = 3V VIN = 0V Output VOH VOL RO RO tR tF tD1 tD2 Switching Time (Note 1) Power Supply IS VDD NOTE: 1. Switching times guaranteed by design. VDD = 18V 1F 1 0.1F 2 6 7 TC4429 4 5 CL = 2500pF 8 0.1F 0V INPUT OUTPUT +18V OUTPUT 0V 10% INPUT: 100 kHz, square wave, tRISE = tFALL 10 nsec +5V INPUT 10% tD1 90% tF 90% 6 tR 90% 10% tD2 7 Figure 1. Switching Time Test Circuit 8 TELCOM SEMICONDUCTOR, INC. 4-227 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS TC4420 TC4429 TYPICAL CHARACTERISTICS Rise Time vs. Supply Voltage 120 100 80 60 100 Fall Time vs. Supply Voltage Rise and Fall Times vs. Temperature 50 C L = 2200 pF VDD = 18V 80 40 TIME (nsec) C L = 10,000 pF TIME (nsec) 60 TIME (nsec) C L = 10,000 pF 30 t FALL tRISE C L = 4700 pF 40 40 C L = 4700 pF C L = 2200 pF 20 C L = 2200 pF 20 0 20 10 5 7 9 11 13 15 0 5 7 VDD (V) 9 11 VDD (V) 13 15 0 -60 -20 20 60 TA (C) 100 140 Rise Time vs. Capacitive Load 100 80 60 TIME (nsec) Fall Time vs. Capacitive Load 100 80 Propagation Delay Time vs. Supply Voltage 65 60 DELAY TIME (nsec) 60 TIME (nsec) VDD = 5V 55 50 45 40 tD2 40 40 VDD = 5V VDD = 12V VDD = 18V VDD = 12V VDD = 18V 20 20 tD1 10 1000 CAPACITIVE LOAD (pF) 10,000 10 1000 CAPACITIVE LOAD (pF) 10,000 35 4 6 8 10 12 14 16 SUPPLY VOLTAGE (V) 18 Propagation Delay Time vs. Temperature 50 C L = 2200 pF VDD = 18V Supply Current vs. Capacitive Load 84 VDD = 15V SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) Supply Current vs. Frequency 1000 CL= 2200 pF 40 70 56 42 18V 100 DELAY TIME (nsec) tD2 30 10V 5V tD1 20 500 kHz 28 10 10 200 kHz 14 20 kHz 0 -60 0 0 0 100 1000 CAPACITIVE LOAD (pF) 10,000 -20 20 60 TA (C) 100 140 0 100 1000 FREQUENCY (kHz) 10,000 4-228 TELCOM SEMICONDUCTOR, INC. 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS TC4420 TC4429 TYPICAL CHARACTERISTICS (Cont.) High-State Output Resistance 5 2.5 1 Low-State Output Resistance 2 3 100 mA 4 ROUT ( ) ROUT ( ) 2 10 mA 50 mA 100 mA 50 mA 1.5 3 10 mA 2 5 7 9 11 VDD (V) 13 15 1 5 7 9 11 VDD (V) 13 15 4 5 6 7 Effect of Input Amplitude on Propagation Delay 200 LOAD = 2200 pF -9 Total nA*S Crossover* 4 DELAY TIME (nsec) 160 Crossover Area (A*S) x 10 3 120 INPUT 2.4V INPUT 3V 2 80 INPUT 5V 40 INPUT 8V AND 10V 1 0 5 6 7 8 9 10 11 12 13 14 15 VDD (V) 0 5 6 7 8 9 10 11 12 13 14 15 SUPPLY VOLTAGE (V) * The values on this graph represent the loss seen by the driver during one complete cycle. For a single transition, divide the value by 2. 8 TELCOM SEMICONDUCTOR, INC. 4-229 |
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